IEC 63601:2026 pdf download,Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion.

IEC 63601:2026 addresses SiC-based PECS devices that feature a gate dielectric region utilized for switching the devices on and off. This generally pertains to MOS devices, including MOSFETs and IGBTs. The document focuses specifically on NMOS (N-type MOS) devices, which are prevalent in power device applications, although the outlined procedures are also applicable to PMOS (P-type MOS) devices.

It is important to note that this document does not establish criteria for device failure, acceptable usage conditions, or lifetime targets; these aspects are left to the discretion of manufacturers and users. Nevertheless, it provides stress test procedures designed to illustrate and assess the stability of the threshold voltage over time, as influenced by gate bias and temperature.
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