IEC 63505:2025 pdf download,Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs.

IEC 63505:2025 provides comprehensive guidance on the measurement methods for threshold voltage (VT) and the necessary conditioning procedures prior to conducting VT tests on silicon carbide (SiC) power MOSFETs. The aim is to minimize or completely eliminate the effects of hysteresis that can interfere with accurate measurements. It is important to note that this method specifically addresses PBTI (Positive Bias Temperature Instability) testing, while excluding considerations related to NBTI (Negative Bias Temperature Instability) and threshold voltage variations resulting from switching events.

SiC MOSFETs often exhibit threshold voltage hysteresis due to transient trap effects, which can significantly affect the assessment of actual VT shifts induced by stress tests, particularly those related to bias temperature instabilities (BTI). By following the guidelines outlined in this standard, users can achieve more reliable and consistent measurements, thereby enhancing the evaluation of device performance under various stress conditions. This is crucial for ensuring the reliability and efficiency of SiC power MOSFETs in practical applications.